ZXTDE4M832TA

new-10%

Manufacturer part number:ZXTDE4M832TA

Manufacturer:Diodes Incorporated

Description:Bipolar Transistors - BJT 80V NPN / 70V PNP

Case Package:SOT-23

Datasheet:ZXTDE4M832TA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-VDFN Exposed Pad
Number of Pins	832
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	10
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	1W
Terminal Position	QUAD
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Current Rating	3.5A
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	ZXTDE4M832
Pin Count	10
JESD-30 Code	R-PQFP-F10
Qualification Status	Not Qualified
Number of Elements	2
Polarity	NPN, PNP
Element Configuration	Dual
Case Connection	COLLECTOR
Transistor Application	SWITCHING
Gain Bandwidth Product	180MHz
Transistor Type	NPN, PNP
Collector Emitter Voltage (VCEO)	325mV
Max Collector Current	2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 200mA 2V / 40 @ 1.5A 5V
Current - Collector Cutoff (Max)	25nA
Vce Saturation (Max) @ Ib, Ic	325mV @ 300mA, 3.5A / 260mV @ 200mA, 1.5A
Collector Emitter Breakdown Voltage	70V
Voltage - Collector Emitter Breakdown (Max)	80V 70V
Current - Collector (Ic) (Max)	3.5A 2.5A
Transition Frequency	160MHz
Max Breakdown Voltage	70V
Frequency - Transition	160MHz 180MHz
Collector Base Voltage (VCBO)	70V
Emitter Base Voltage (VEBO)	7.5V
hFE Min	200
Continuous Collector Current	-2.5A
Height	1mm
Length	3mm
Width	2mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free