ZXTN2007GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTN2007GTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Voltage - Rated DC
30V
Max Power Dissipation
3W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
7A
Frequency
140MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTN2007
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
3W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
140MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
7A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
220mV @ 300mA, 6.5A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
140MHz
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
7V
Continuous Collector Current
7A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.977520
$0.97752
10
$0.922189
$9.22189
100
$0.869989
$86.9989
500
$0.820745
$410.3725
1000
$0.774287
$774.287
ZXTN2007GTA Product Details
ZXTN2007GTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1A 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 220mV @ 300mA, 6.5A.Continuous collector voltage should be kept at 7A for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.The current rating of this fuse is 7A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 140MHz.An input voltage of 30V volts is the breakdown voltage.Collector current can be as low as 7A volts at its maximum.
ZXTN2007GTA Features
the DC current gain for this device is 100 @ 1A 1V the vce saturation(Max) is 220mV @ 300mA, 6.5A the emitter base voltage is kept at 7V the current rating of this device is 7A a transition frequency of 140MHz
ZXTN2007GTA Applications
There are a lot of Diodes Incorporated ZXTN2007GTA applications of single BJT transistors.