ZXTP25015DFHTA Overview

This device has a DC current gain of 300 @ 10mA 2V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of -160mV, it allows for maximum design flexibility.When VCE saturation is 220mV @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at -7V to achieve high efficiency.In this part, there is a transition frequency of 295MHz.Single BJT transistor can take a breakdown input voltage of 15V volts.Maximum collector currents can be below 4A volts.

ZXTP25015DFHTA Features

the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -160mV
the vce saturation(Max) is 220mV @ 500mA, 5A
the emitter base voltage is kept at -7V
a transition frequency of 295MHz

ZXTP25015DFHTA Applications

There are a lot of Diodes Incorporated ZXTP25015DFHTA applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface