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BYT52B

BYT52B

BYT52B

EIC Semiconductor

SOT-23

BYT52B Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 100
Peak Reverse Repetitive Voltage (V) 100
Maximum Continuous Forward Current (A) 1.4
Peak Non-Repetitive Surge Current (A) 50
Peak Forward Voltage (V) 1.3@1A
Peak Reverse Current (uA) 10
Peak Reverse Recovery Time (ns) 200
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Package Case D-2
Military No
Mounting Through Hole
Package Length 7.2(Max)
PCB changed 2
Part StatusActive
Type Switching Diode
Pin Count2
Configuration Single
Diameter 4.1(Max)
RoHS StatusRoHS Compliant
In-Stock:4303 items

BYT52B Product Details

BYT52B Overview


In accordance with the datasheets, the forward peak voltage is [email protected] 1.4 is the maximum continuous forward current consumed by this device at any given time.The DC reverse voltage used for operation must be less than 100.

BYT52B Features


the forward peak voltage is 1.3@1A


BYT52B Applications


There are a lot of EIC Semiconductor
BYT52B applications of RF diodes.


  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors

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