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F2W10G

F2W10G

F2W10G

EIC Semiconductor

SOT-23

F2W10G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
HTS 8541.10.00.80
Bridge Type Single Phase
Peak Reverse Repetitive Voltage (V) 1000
Peak Average Forward Current (A) 2
Peak RMS Reverse Voltage (V) 700
Peak Non-Repetitive Forward Surge Current (A) 30
Peak Forward Voltage (V) 1.3@1A
Peak Reverse Current (uA) 10
Minimum Operating Temperature (°C) -50
Maximum Operating Temperature (°C) 150
AEC Qualified No
Supplier Package WOB
Military No
Mounting Through Hole
Package Height 5.59(Max)
PCB changed 4
Part StatusActive
Pin Count4
Configuration Single
Diameter 10(Max)
RoHS StatusRoHS Compliant
In-Stock:3758 items

F2W10G Product Details

F2W10G Overview


In accordance with the datasheets, the forward peak voltage is [email protected] effective reverse voltage range of 700 is provided by this device.

F2W10G Features


the forward peak voltage is 1.3@1A
the peak RMS reverse voltage range of 700


F2W10G Applications


There are a lot of EIC Semiconductor
F2W10G applications of RF diodes.


  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors

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