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MB85R256FPF-G-BND-ERE1

MB85R256FPF-G-BND-ERE1

MB85R256FPF-G-BND-ERE1

Fujitsu Electronics America, Inc.

Memory IC

SOT-23

MB85R256FPF-G-BND-ERE1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case 28-SOIC (0.295, 7.50mm Width)
Supplier Device Package 28-SOP
Operating Temperature -40°C~85°C TA
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology FRAM (Ferroelectric RAM)
Voltage - Supply 2.7V~3.6V
Memory Size 256Kb 32K x 8
Memory Type Non-Volatile
Access Time 150ns
Memory Format FRAM
Memory Interface Parallel
Write Cycle Time - Word, Page 150ns
RoHS Status Non-RoHS Compliant
MB85R256FPF-G-BND-ERE1 Product Details

MB85R256FPF-G-BND-ERE1 Overview


In terms of its memory type, it can be classified as Non-Volatile. The case comes in Tape & Reel (TR) size. There is a 28-SOIC (0.295, 7.50mm Width) case embedded in it. There is an 256Kb 32K x 8 memory capacity on the chip. There is a FRAM-format memory used in this device, which is the memory format used by mainstream devices. A wide operating temperature range makes this device ideal for a variety of demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V volts. The recommended mounting type for this device is Surface Mount.

MB85R256FPF-G-BND-ERE1 Features


Package / Case: 28-SOIC (0.295, 7.50mm Width)

MB85R256FPF-G-BND-ERE1 Applications


There are a lot of Fujitsu Electronics America, Inc. MB85R256FPF-G-BND-ERE1 Memory applications.

  • nonvolatile BIOS memory
  • eSRAM
  • cell phones
  • networking
  • supercomputers
  • printers
  • main computer memory
  • embedded logic
  • hard disk drive (HDD)
  • multimedia computers

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