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FST63100M

FST63100M

FST63100M

GeneSiC Semiconductor

FST63100M datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website

SOT-23

FST63100M Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case 3-SIP Module
Diode Element Material SILICON
Packaging Bulk
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.10.00.80
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
JESD-30 Code R-PSFM-T3
Operating Temperature (Max) 150°C
Number of Elements 2
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 1mA @ 100V
Voltage - Forward (Vf) (Max) @ If 840mV @ 30A
Forward Current 60A
Operating Temperature - Junction -55°C~150°C
Application POWER
Max Reverse Voltage (DC) 100V
Average Rectified Current 30A
Number of Phases 1
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 100V
Diode Configuration 1 Pair Common Cathode
RoHS Status RoHS Compliant
FST63100M Product Details

FST63100M Overview


When the forward voltage is set to 60A, this device will operate.This device is powered with reverse voltage peak of 1A V.

FST63100M Features


a peak voltage of 1A
a reverse voltage peak of 1A

FST63100M Applications


There are a lot of GeneSiC Semiconductor FST63100M applications of rectifier diode array.

  • Free wheeling diode in low voltage converters
  • General Rectification
  • Battery chargers
  • Rectifiers in switch mode power supplies (SMPS)
  • Crowbar applications
  • Rectifier for drives applications
  • Rectifiers for UBS

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