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FST6310M

  • FST6310M
  • FST6310M

FST6310M

FST6310M

GeneSiC Semiconductor

FST6310M datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website

SOT-23

FST6310M Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case D61-3M
Diode Element Material SILICON
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
JESD-30 Code R-PSFM-T3
Operating Temperature (Max) 150°C
Number of Elements 2
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 1mA @ 10V
Voltage - Forward (Vf) (Max) @ If 700mV @ 30A
Forward Current 60A
Operating Temperature - Junction -55°C~150°C
Application POWER
Max Reverse Voltage (DC) 10V
Average Rectified Current 30A
Number of Phases 1
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 10V
Diode Configuration 1 Pair Common Cathode
RoHS Status RoHS Compliant
FST6310M Product Details

FST6310M Overview


When the forward voltage is set to 60A, this device will operate.Powered by reverse voltage, this device has a peak voltage of 1A.

FST6310M Features


a peak voltage of 1A
a reverse voltage peak of 1A

FST6310M Applications


There are a lot of GeneSiC Semiconductor FST6310M applications of rectifier diode array.

  • Crowbar applications
  • Rectifier for drives applications
  • Battery chargers
  • Free wheeling diode in low voltage converters
  • Rectifiers in switch mode power supplies (SMPS)
  • General Rectification
  • Rectifiers for UBS

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