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FST6330M

FST6330M

FST6330M

GeneSiC Semiconductor

FST6330M datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website

SOT-23

FST6330M Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case D61-3M
Diode Element Material SILICON
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Terminal FormTHROUGH-HOLE
JESD-30 Code R-PSFM-T3
Operating Temperature (Max) 150°C
Number of Elements 2
Element ConfigurationCommon Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 1mA @ 30V
Voltage - Forward (Vf) (Max) @ If 700mV @ 30A
Forward Current60A
Operating Temperature - Junction -55°C~150°C
Application POWER
Max Reverse Voltage (DC) 30V
Average Rectified Current30A
Number of Phases 1
Peak Reverse Current1A
Max Repetitive Reverse Voltage (Vrrm) 30V
Diode Configuration 1 Pair Common Cathode
RoHS StatusRoHS Compliant
In-Stock:1112 items

FST6330M Product Details

FST6330M Overview


In operation, this device will be set to 60A volts forward.There is a reverse voltage peak of 1A on devices like this one.

FST6330M Features


a peak voltage of 1A
a reverse voltage peak of 1A

FST6330M Applications


There are a lot of GeneSiC Semiconductor FST6330M applications of rectifier diode array.

  • General Rectification
  • Rectifiers for UBS
  • Crowbar applications
  • Rectifier for drives applications
  • Rectifiers in switch mode power supplies (SMPS)
  • Free wheeling diode in low voltage converters
  • Battery chargers

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