FST8330M datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
FST8330M Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
D61-3M
Diode Element Material
SILICON
Packaging
Bulk
Published
2012
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Terminal Position
SINGLE
Terminal Form
THROUGH-HOLE
JESD-30 Code
R-PSFM-T3
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1.5mA @ 20V
Voltage - Forward (Vf) (Max) @ If
650mV @ 80A
Forward Current
80A
Operating Temperature - Junction
-55°C~150°C
Output Current-Max
40A
Application
POWER
Current - Average Rectified (Io)
80A DC
Forward Voltage
750mV
Max Reverse Voltage (DC)
30V
Average Rectified Current
80A
Number of Phases
1
Peak Reverse Current
1μA
Max Repetitive Reverse Voltage (Vrrm)
30V
Diode Configuration
1 Pair Common Cathode
Max Forward Surge Current (Ifsm)
800A
RoHS Status
RoHS Compliant
FST8330M Product Details
FST8330M Overview
When the forward voltage is set to 750mV, this device will operate.The maximum output voltage can be set to 40A.A forward voltage of 80A will enable the device to operate.Devices like this one are powered with a reverse voltage peak of 1μA.
FST8330M Features
750mV forward voltage a maximum output voltage of 40A a peak voltage of 1μA a reverse voltage peak of 1μA
FST8330M Applications
There are a lot of GeneSiC Semiconductor FST8330M applications of rectifier diode array.