FST8345M datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
FST8345M Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
D61-3M
Diode Element Material
SILICON
Packaging
Bulk
Published
2012
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Terminal Position
SINGLE
Terminal Form
THROUGH-HOLE
JESD-30 Code
R-PSFM-T3
Number of Elements
2
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1.5mA @ 20V
Voltage - Forward (Vf) (Max) @ If
650mV @ 80A
Forward Current
80A
Max Reverse Leakage Current
1μA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
800A
Output Current-Max
40A
Application
POWER
Current - Average Rectified (Io)
80A DC
Max Reverse Voltage (DC)
45V
Average Rectified Current
80A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
45V
Diode Configuration
1 Pair Common Cathode
RoHS Status
RoHS Compliant
FST8345M Product Details
FST8345M Overview
Array is capable of supporting a maximum output voltage of 40A.Array is important to monArrayor the surge current and make sure that Array does not exceed 800A.In the case of 80A forward voltage, the device will operate.There is a reverse voltage peak of 1A on devices like this one.Its maximal reverse leakage current is 1μA, which is the current from that semiconductor device when the device is reverse biased.
FST8345M Features
a maximum output voltage of 40A a peak voltage of 1A a reverse voltage peak of 1A
FST8345M Applications
There are a lot of GeneSiC Semiconductor FST8345M applications of rectifier diode array.