GA10SICP12-263

new-10%

Manufacturer part number:GA10SICP12-263

Manufacturer:GeneSiC Semiconductor

Description:TRANS SJT 1200V 25A TO263-7

Case Package:SOT-23

Datasheet:GA10SICP12-263 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Operating Temperature	175°C TJ
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	SiC (Silicon Carbide Junction Transistor)
Power Dissipation-Max	170W Tc
Rds On (Max) @ Id, Vgs	100m Ω @ 10A
Input Capacitance (Ciss) (Max) @ Vds	1403pF @ 800V
Current - Continuous Drain (Id) @ 25°C	25A Tc
Drain to Source Voltage (Vdss)	1200V
Continuous Drain Current (ID)	25A
RoHS Status	RoHS Compliant