GB01SLT12-252

new-10%

Manufacturer part number:GB01SLT12-252

Manufacturer:GeneSiC Semiconductor

Description:Sic Schottky Diode, Single, 1A, 1.2Kv, To-252

Case Package:SOT-23

Datasheet:GB01SLT12-252 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	35 Weeks
Lifecycle Status	PRODUCTION (Last Updated: 6 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Packaging	Cut Tape (CT)
Published	2015
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Additional Feature	PD-CASE
Max Power Dissipation	42W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Speed	No Recovery Time > 500mA (Io)
Diode Type	Silicon Carbide Schottky
Current - Reverse Leakage @ Vr	2μA @ 1200V
Voltage - Forward (Vf) (Max) @ If	1.8V @ 1A
Case Connection	CATHODE
Forward Current	6A
Max Reverse Leakage Current	4μA
Operating Temperature - Junction	-55°C~175°C
Max Surge Current	10A
Voltage - DC Reverse (Vr) (Max)	1200V
Max Reverse Voltage (DC)	1.2kV
Average Rectified Current	1A
Reverse Recovery Time	0ns
Peak Reverse Current	1μA
Max Repetitive Reverse Voltage (Vrrm)	1.2kV
Capacitance @ Vr, F	69pF @ 1V 1MHz
Max Forward Surge Current (Ifsm)	65A
Recovery Time	17 ns
Max Junction Temperature (Tj)	175°C
Height	2.507mm
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant