MBR12060CT datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MBR12060CT Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Mount
Chassis Mount, Through Hole
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2010
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
Solder
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Pitch
1mm
Terminal Position
UPPER
Orientation
Straight
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Contacts
14
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
3mA @ 20V
Voltage - Forward (Vf) (Max) @ If
750mV @ 60A
Case Connection
CATHODE
Forward Current
120A
Max Reverse Leakage Current
1μA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
800A
Output Current-Max
60A
Application
POWER
Current - Average Rectified (Io)
120A DC
Max Reverse Voltage (DC)
60V
Average Rectified Current
120A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
60V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$65.65840
$1641.46
MBR12060CT Product Details
MBR12060CT Overview
A maximum output voltage of 60A is supported by array.As a general rule, surge currents should be monitored and kept below 800A.This device will operate when the forward voltage is set to 120A.A reverse voltage peak of 1A is applied to devices like this one.As a reverse biased semiconductor device, its maximal reverse leakage current is 1μA.
MBR12060CT Features
a maximum output voltage of 60A a peak voltage of 1A a reverse voltage peak of 1A
MBR12060CT Applications
There are a lot of GeneSiC Semiconductor MBR12060CT applications of rectifier diode array.