MBR12060CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
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MBR12060CTR Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2010
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
3mA @ 20V
Voltage - Forward (Vf) (Max) @ If
750mV @ 60A
Case Connection
ANODE
Forward Current
120A
Max Reverse Leakage Current
1μA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
800A
Output Current-Max
60A
Application
POWER
Current - Average Rectified (Io)
120A DC
Max Reverse Voltage (DC)
60V
Average Rectified Current
120A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
60V
Diode Configuration
1 Pair Common Cathode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$65.65840
$1641.46
MBR12060CTR Product Details
MBR12060CTR Overview
There is a maximum output voltage of 60A.We should be monitoring the surge current and keeping it below 800A.When the forward voltage is set to 120A, this device will operate.This device is powered with reverse voltage peak of 1A V.When reverse biased, its maximum reverse leakage current is 1μA, which is the current coming from that semiconductor device.
MBR12060CTR Features
a maximum output voltage of 60A a peak voltage of 1A a reverse voltage peak of 1A
MBR12060CTR Applications
There are a lot of GeneSiC Semiconductor MBR12060CTR applications of rectifier diode array.