MBR20080CT

new-10%

Manufacturer part number:MBR20080CT

Manufacturer:GeneSiC Semiconductor

Description:MBR20080CT datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MBR20080CT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	PRODUCTION (Last Updated: 6 months ago)
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	Twin Tower
Diode Element Material	SILICON
Packaging	Bulk
Published	2013
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Max Operating Temperature	175°C
Min Operating Temperature	-40°C
HTS Code	8541.10.00.80
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
JESD-30 Code	R-PUFM-X2
Number of Elements	2
Element Configuration	Common Cathode
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Schottky
Current - Reverse Leakage @ Vr	5mA @ 20V
Voltage - Forward (Vf) (Max) @ If	840mV @ 100A
Forward Current	200A
Max Reverse Leakage Current	1μA
Max Surge Current	1.5kA
Output Current-Max	100A
Application	POWER
Current - Average Rectified (Io)	200A DC
Max Reverse Voltage (DC)	80V
Average Rectified Current	200A
Number of Phases	1
Peak Reverse Current	1A
Max Repetitive Reverse Voltage (Vrrm)	80V
Diode Configuration	1 Pair Common Cathode
RoHS Status	RoHS Compliant