MBR20080CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MBR20080CTR Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Elements
2
Element Configuration
Common Anode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
5mA @ 20V
Voltage - Forward (Vf) (Max) @ If
840mV @ 100A
Forward Current
200A
Max Reverse Leakage Current
1μA
Max Surge Current
1.5kA
Output Current-Max
100A
Application
POWER
Current - Average Rectified (Io)
200A DC
Max Reverse Voltage (DC)
80V
Average Rectified Current
200A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
80V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$70.90600
$1772.65
MBR20080CTR Product Details
MBR20080CTR Overview
100A is its maximum output voltage.In order to prevent the surge current from exceeding 1.5kA, it should be monitored.In the case of 200A forward voltage, the device will operate.There is a reverse voltage peak of 1A on devices like this one.The maximum reverse leakage current from a semiconductor device when reverse biased is 1μA.
MBR20080CTR Features
a maximum output voltage of 100A a peak voltage of 1A a reverse voltage peak of 1A
MBR20080CTR Applications
There are a lot of GeneSiC Semiconductor MBR20080CTR applications of rectifier diode array.