MBR30020CT datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MBR30020CT Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2012
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
8mA @ 20V
Voltage - Forward (Vf) (Max) @ If
650mV @ 150A
Forward Current
300A
Max Reverse Leakage Current
1μA
Max Surge Current
2.5kA
Output Current-Max
150A
Application
POWER
Current - Average Rectified (Io)
300A DC
Max Reverse Voltage (DC)
20V
Average Rectified Current
300A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
20V
Diode Configuration
1 Pair Common Cathode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$69.16240
$1729.06
MBR30020CT Product Details
MBR30020CT Overview
Array is capable of supporting a maximum output voltage of 150A.As a general rule, surge currents should be monitored and kept below 2.5kA.In operation, this device will be set to 300A volts forward.A reverse voltage peak of 1A is used to power devices like this one.The maximum reverse leakage current from this semiconductor is 1μA, which corresponds to the reverse leakage current from that device when reverse biased.
MBR30020CT Features
a maximum output voltage of 150A a peak voltage of 1A a reverse voltage peak of 1A
MBR30020CT Applications
There are a lot of GeneSiC Semiconductor MBR30020CT applications of rectifier diode array.