MBR30030CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MBR30030CTR Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2012
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
8mA @ 20V
Voltage - Forward (Vf) (Max) @ If
650mV @ 150A
Forward Current
300A
Max Reverse Leakage Current
1μA
Max Surge Current
2.5kA
Output Current-Max
150A
Application
POWER
Current - Average Rectified (Io)
300A DC
Max Reverse Voltage (DC)
30V
Average Rectified Current
300A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
30V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$50.49000
$1262.25
MBR30030CTR Product Details
MBR30030CTR Overview
The maximum output voltage can be set to 150A.Maintaining a surge current under 2.5kA and not letting it exceed it is the key to preventing it.A forward voltage of 300A will enable the device to operate.Array is powered by a reverse voltage peak of 1A.When reverse biased, its maximal reverse leakage current is 1μA, which is the current flowing from that semiconductor device.
MBR30030CTR Features
a maximum output voltage of 150A a peak voltage of 1A a reverse voltage peak of 1A
MBR30030CTR Applications
There are a lot of GeneSiC Semiconductor MBR30030CTR applications of rectifier diode array.