MBR30040CT datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
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MBR30040CT Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Chassis Mount, Through Hole
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2012
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
Solder
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Pitch
4.2mm
Terminal Position
UPPER
Orientation
Straight
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Contacts
8
Number of Elements
2
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
8mA @ 20V
Voltage - Forward (Vf) (Max) @ If
650mV @ 150A
Max Voltage Rating (DC)
600.6kV
Forward Current
300A
Max Reverse Leakage Current
1μA
Max Surge Current
2.5kA
Output Current-Max
150A
Application
POWER
Current - Average Rectified (Io)
300A DC
Max Reverse Voltage (DC)
40V
Average Rectified Current
300A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
40V
Diode Configuration
1 Pair Common Cathode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$50.49000
$1262.25
MBR30040CT Product Details
MBR30040CT Overview
A maximum output voltage of 150A can be supported.In order to prevent the surge current from exceeding 2.5kA, it should be monitored.When the forward voltage is set to 300A, this device will operate.Devices like this one are powered with a reverse voltage peak of 1A.This semiconductor device's maximal reverse leakage current is 1μA kA, which is its reverse leakage current when reverse biased.
MBR30040CT Features
a maximum output voltage of 150A a peak voltage of 1A a reverse voltage peak of 1A
MBR30040CT Applications
There are a lot of GeneSiC Semiconductor MBR30040CT applications of rectifier diode array.