MBR30080CT datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MBR30080CT Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Elements
2
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
8mA @ 20V
Voltage - Forward (Vf) (Max) @ If
840mV @ 150A
Forward Current
300A
Max Reverse Leakage Current
1μA
Max Surge Current
2.5kA
Output Current-Max
150A
Application
POWER
Current - Average Rectified (Io)
300A DC
Max Reverse Voltage (DC)
80V
Average Rectified Current
300A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
80V
Diode Configuration
1 Pair Common Cathode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$69.16240
$1729.06
MBR30080CT Product Details
MBR30080CT Overview
This device can support a maximum output voltage of 150A.A surge current should be monitored and should not exceed 2.5kA.A forward voltage of 300A will enable the device to operate.The reverse voltage peak of this device is 1A.As a reverse biased semiconductor device, its maximal reverse leakage current is 1μA.
MBR30080CT Features
a maximum output voltage of 150A a peak voltage of 1A a reverse voltage peak of 1A
MBR30080CT Applications
There are a lot of GeneSiC Semiconductor MBR30080CT applications of rectifier diode array.