MBR30080CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
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MBR30080CTR Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Elements
2
Element Configuration
Common Anode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
8mA @ 20V
Voltage - Forward (Vf) (Max) @ If
840mV @ 150A
Forward Current
300A
Max Reverse Leakage Current
1μA
Max Surge Current
2.5kA
Output Current-Max
150A
Application
POWER
Current - Average Rectified (Io)
300A DC
Max Reverse Voltage (DC)
80V
Average Rectified Current
300A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
80V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$50.49000
$1262.25
MBR30080CTR Product Details
MBR30080CTR Overview
The maximum output voltage is 150A.We should be monitoring the surge current and keeping it below 2.5kA.In operation, this device will be set to 300A volts forward.A reverse voltage peak of 1A is used to power devices like this one.The maximum reverse leakage current from a semiconductor device when reverse biased is 1μA.
MBR30080CTR Features
a maximum output voltage of 150A a peak voltage of 1A a reverse voltage peak of 1A
MBR30080CTR Applications
There are a lot of GeneSiC Semiconductor MBR30080CTR applications of rectifier diode array.