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MBR400100CTR

MBR400100CTR

MBR400100CTR

GeneSiC Semiconductor

MBR400100CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website

SOT-23

MBR400100CTR Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Chassis Mount, Through Hole
Mounting Type Chassis Mount
Package / Case Twin Tower
Number of Pins 2
Diode Element Material SILICON
Packaging Bulk
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination Solder
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Pitch 4.2mm
Terminal Position UPPER
Orientation Straight
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Contacts 14
Number of Elements 2
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky, Reverse Polarity
Current - Reverse Leakage @ Vr 5mA @ 20V
Voltage - Forward (Vf) (Max) @ If 840mV @ 200A
Max Voltage Rating (DC) 600.6kV
Forward Current 200A
Max Reverse Leakage Current 1μA
Operating Temperature - Junction -55°C~150°C
Max Surge Current 3kA
Application POWER
Current - Average Rectified (Io) 400A DC
Forward Voltage 840mV
Max Reverse Voltage (DC) 100V
Average Rectified Current 400A
Number of Phases 1
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 100V
Diode Configuration 1 Pair Common Anode
Max Forward Surge Current (Ifsm) 3kA
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $102.960000 $102.96
10 $97.132075 $971.32075
100 $91.634033 $9163.4033
500 $86.447201 $43223.6005
1000 $81.553964 $81553.964
MBR400100CTR Product Details

MBR400100CTR Overview


In this case, the forward voltage has to be set at 840mV to operate the device.Surge currents should be monitored and prevented from exceeding 3kA.There will be no operation of this device when the forward voltage is set to 200A.Powered by reverse voltage, this device has a peak voltage of 1A.A semiconductor device's maximum reverse leakage current is 1μA, which is the current created by its reverse bias.

MBR400100CTR Features


840mV forward voltage
a peak voltage of 1A
a reverse voltage peak of 1A

MBR400100CTR Applications


There are a lot of GeneSiC Semiconductor MBR400100CTR applications of rectifier diode array.

  • General Rectification
  • Rectifier for drives applications
  • Crowbar applications
  • Rectifiers for UBS
  • Free wheeling diode in low voltage converters
  • Rectifiers in switch mode power supplies (SMPS)
  • Battery chargers

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