MBR400100CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MBR400100CTR Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Chassis Mount, Through Hole
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Number of Pins
2
Diode Element Material
SILICON
Packaging
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
Solder
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Pitch
4.2mm
Terminal Position
UPPER
Orientation
Straight
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Contacts
14
Number of Elements
2
Element Configuration
Common Anode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky, Reverse Polarity
Current - Reverse Leakage @ Vr
5mA @ 20V
Voltage - Forward (Vf) (Max) @ If
840mV @ 200A
Max Voltage Rating (DC)
600.6kV
Forward Current
200A
Max Reverse Leakage Current
1μA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
3kA
Application
POWER
Current - Average Rectified (Io)
400A DC
Forward Voltage
840mV
Max Reverse Voltage (DC)
100V
Average Rectified Current
400A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
100V
Diode Configuration
1 Pair Common Anode
Max Forward Surge Current (Ifsm)
3kA
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$102.960000
$102.96
10
$97.132075
$971.32075
100
$91.634033
$9163.4033
500
$86.447201
$43223.6005
1000
$81.553964
$81553.964
MBR400100CTR Product Details
MBR400100CTR Overview
In this case, the forward voltage has to be set at 840mV to operate the device.Surge currents should be monitored and prevented from exceeding 3kA.There will be no operation of this device when the forward voltage is set to 200A.Powered by reverse voltage, this device has a peak voltage of 1A.A semiconductor device's maximum reverse leakage current is 1μA, which is the current created by its reverse bias.
MBR400100CTR Features
840mV forward voltage a peak voltage of 1A a reverse voltage peak of 1A
MBR400100CTR Applications
There are a lot of GeneSiC Semiconductor MBR400100CTR applications of rectifier diode array.