MBR40040CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
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MBR40040CTR Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2010
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Elements
2
Element Configuration
Common Anode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
5mA @ 20V
Voltage - Forward (Vf) (Max) @ If
650mV @ 100A
Forward Current
400A
Max Reverse Leakage Current
1μA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
3kA
Output Current-Max
200A
Application
POWER
Current - Average Rectified (Io)
400A DC
Max Reverse Voltage (DC)
40V
Average Rectified Current
400A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
40V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$65.89000
$65.89
10
$62.01600
$620.16
MBR40040CTR Product Details
MBR40040CTR Overview
200A is its maximum output voltage.Keeping the surge current under 3kA and preventing it from exceeding it should be the rule.In operation, this device will be set to 400A volts forward.This device is powered with reverse voltage peak of 1A V.When reverse biased, its maximal reverse leakage current is 1μA, which is the current flowing from that semiconductor device.
MBR40040CTR Features
a maximum output voltage of 200A a peak voltage of 1A a reverse voltage peak of 1A
MBR40040CTR Applications
There are a lot of GeneSiC Semiconductor MBR40040CTR applications of rectifier diode array.