MBR40060CT datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MBR40060CT Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Chassis Mount, Through Hole
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2012
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
Solder
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Pitch
4.2mm
Terminal Position
UPPER
Orientation
Straight
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Contacts
10
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
5mA @ 20V
Voltage - Forward (Vf) (Max) @ If
800mV @ 200A
Max Voltage Rating (DC)
600.6kV
Forward Current
400A
Output Current-Max
200A
Application
POWER
Current - Average Rectified (Io)
400A DC
Forward Voltage
800mV
Max Reverse Voltage (DC)
60V
Average Rectified Current
400A
Number of Phases
1
Peak Reverse Current
1μA
Max Repetitive Reverse Voltage (Vrrm)
60V
Diode Configuration
1 Pair Common Cathode
Max Forward Surge Current (Ifsm)
3kA
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$58.14000
$1453.5
MBR40060CT Product Details
MBR40060CT Overview
The device operates when the forward voltage is set to 800mV.The maximum output voltage is 200A.This device will operate when the forward voltage is set to 400A.There is a reverse voltage peak of 1μA on devices like this one.
MBR40060CT Features
800mV forward voltage a maximum output voltage of 200A a peak voltage of 1μA a reverse voltage peak of 1μA
MBR40060CT Applications
There are a lot of GeneSiC Semiconductor MBR40060CT applications of rectifier diode array.