MBR40080CT datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MBR40080CT Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2012
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
5mA @ 20V
Voltage - Forward (Vf) (Max) @ If
840mV @ 200A
Forward Current
400A
Max Reverse Leakage Current
1μA
Max Surge Current
3kA
Output Current-Max
200A
Application
POWER
Current - Average Rectified (Io)
400A DC
Max Reverse Voltage (DC)
80V
Average Rectified Current
400A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
80V
Diode Configuration
1 Pair Common Cathode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$93.002000
$93.002
10
$87.737736
$877.37736
100
$82.771449
$8277.1449
500
$78.086273
$39043.1365
1000
$73.666295
$73666.295
MBR40080CT Product Details
MBR40080CT Overview
A maximum output voltage of 200A can be supported.A surge current should be monitored and should not exceed 3kA.The device operates when the forward voltage is set to 400A.Powered by reverse voltage, this device has a peak voltage of 1A.When it's reverse biased, it's maximal reverse leakage current is 1μA.
MBR40080CT Features
a maximum output voltage of 200A a peak voltage of 1A a reverse voltage peak of 1A
MBR40080CT Applications
There are a lot of GeneSiC Semiconductor MBR40080CT applications of rectifier diode array.