MBR50080CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
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MBR50080CTR Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Elements
2
Element Configuration
Common Anode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky, Reverse Polarity
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
880mV @ 250A
Forward Current
500A
Max Reverse Leakage Current
1μA
Max Surge Current
3.5kA
Output Current-Max
250A
Application
POWER
Current - Average Rectified (Io)
500A DC
Max Reverse Voltage (DC)
80V
Average Rectified Current
500A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
80V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$84.49080
$2112.27
MBR50080CTR Product Details
MBR50080CTR Overview
Array is capable of supporting a maximum output voltage of 250A.As a general rule, surge currents should be monitored and kept below 3.5kA.In this case, the forward voltage has to be set at 500A to operate the device.In devices such as this one, reverse voltage peak is set at 1A.A semiconductor device's maximum reverse leakage current is 1μA, which is the current created by its reverse bias.
MBR50080CTR Features
a maximum output voltage of 250A a peak voltage of 1A a reverse voltage peak of 1A
MBR50080CTR Applications
There are a lot of GeneSiC Semiconductor MBR50080CTR applications of rectifier diode array.