MBR600100CT

new-10%

Manufacturer part number:MBR600100CT

Manufacturer:GeneSiC Semiconductor

Description:MBR600100CT datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MBR600100CT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	PRODUCTION (Last Updated: 6 months ago)
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	Twin Tower
Diode Element Material	SILICON
Packaging	Bulk
Published	2013
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
HTS Code	8541.10.00.80
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PUFM-X2
Number of Elements	2
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Schottky
Current - Reverse Leakage @ Vr	1mA @ 20V
Voltage - Forward (Vf) (Max) @ If	880mV @ 300A
Forward Current	600A
Max Reverse Leakage Current	1μA
Max Surge Current	4kA
Output Current-Max	300A
Application	POWER
Current - Average Rectified (Io)	300A
Max Reverse Voltage (DC)	100V
Average Rectified Current	600A
Number of Phases	1
Peak Reverse Current	1A
Max Repetitive Reverse Voltage (Vrrm)	100V
Diode Configuration	1 Pair Common Cathode
RoHS Status	RoHS Compliant