MBR600100CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MBR600100CTR Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
880mV @ 300A
Forward Current
600A
Max Reverse Leakage Current
1μA
Max Surge Current
4kA
Output Current-Max
300A
Application
POWER
Current - Average Rectified (Io)
300A
Max Reverse Voltage (DC)
100V
Average Rectified Current
600A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
100V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$96.34800
$2408.7
MBR600100CTR Product Details
MBR600100CTR Overview
300A is its maximum output voltage.We should be monitoring the surge current and keeping it below 4kA.A forward voltage of 600A will enable the device to operate.There is a reverse voltage peak of 1A on devices like this one.When reverse biased, its maximal reverse leakage current is 1μA, which is the current flowing from that semiconductor device.
MBR600100CTR Features
a maximum output voltage of 300A a peak voltage of 1A a reverse voltage peak of 1A
MBR600100CTR Applications
There are a lot of GeneSiC Semiconductor MBR600100CTR applications of rectifier diode array.