MBR60030CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
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MBR60030CTR Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
750mV @ 300A
Forward Current
600A
Max Reverse Leakage Current
1μA
Max Surge Current
4kA
Output Current-Max
300A
Application
POWER
Current - Average Rectified (Io)
300A
Max Reverse Voltage (DC)
30V
Average Rectified Current
600A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
30V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$96.34800
$2408.7
MBR60030CTR Product Details
MBR60030CTR Overview
A maximum output voltage of 300A can be supported.In order to prevent the surge current from exceeding 4kA, it should be monitored.In operation, this device will be set to 600A volts forward.Array is powered by a reverse voltage peak of 1A.This semiconductor device's maximal reverse leakage current is 1μA kA, which is its reverse leakage current when reverse biased.
MBR60030CTR Features
a maximum output voltage of 300A a peak voltage of 1A a reverse voltage peak of 1A
MBR60030CTR Applications
There are a lot of GeneSiC Semiconductor MBR60030CTR applications of rectifier diode array.