MBR60035CT datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
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MBR60035CT Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
750mV @ 300A
Forward Current
600A
Max Reverse Leakage Current
1μA
Max Surge Current
4kA
Output Current-Max
300A
Application
POWER
Current - Average Rectified (Io)
300A
Max Reverse Voltage (DC)
35V
Average Rectified Current
600A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
35V
Diode Configuration
1 Pair Common Cathode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$96.34800
$2408.7
MBR60035CT Product Details
MBR60035CT Overview
The maximum output voltage can be set to 300A.Surge currents should be monitored and prevented from exceeding 4kA.There will be no operation of this device when the forward voltage is set to 600A.A reverse voltage peak of 1A is applied to devices like this one.A semiconductor device's maximum reverse leakage current is 1μA, which is the current created by its reverse bias.
MBR60035CT Features
a maximum output voltage of 300A a peak voltage of 1A a reverse voltage peak of 1A
MBR60035CT Applications
There are a lot of GeneSiC Semiconductor MBR60035CT applications of rectifier diode array.