MBR60035CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
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MBR60035CTR Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
750mV @ 300A
Forward Current
600A
Max Reverse Leakage Current
1μA
Max Surge Current
4kA
Output Current-Max
300A
Application
POWER
Current - Average Rectified (Io)
300A
Max Reverse Voltage (DC)
35V
Average Rectified Current
600A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
35V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$96.34800
$2408.7
MBR60035CTR Product Details
MBR60035CTR Overview
A maximum output voltage of 300A is supported by array.Array should be a rule to monArrayor the surge current and not allow Array to exceed 4kA.When the forward voltage is set to 600A, this device will operate.Powered by reverse voltage, this device has a peak voltage of 1A.This semiconductor device's maximal reverse leakage current is 1μA kA, which is its reverse leakage current when reverse biased.
MBR60035CTR Features
a maximum output voltage of 300A a peak voltage of 1A a reverse voltage peak of 1A
MBR60035CTR Applications
There are a lot of GeneSiC Semiconductor MBR60035CTR applications of rectifier diode array.