MBR60080CT datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
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MBR60080CT Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
880mV @ 300A
Forward Current
600A
Max Reverse Leakage Current
1μA
Max Surge Current
4kA
Output Current-Max
300A
Application
POWER
Current - Average Rectified (Io)
300A
Max Reverse Voltage (DC)
80V
Average Rectified Current
600A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
80V
Diode Configuration
1 Pair Common Cathode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$96.34800
$2408.7
MBR60080CT Product Details
MBR60080CT Overview
There is a maximum output voltage of 300A.Array should be a rule to monArrayor the surge current and not allow Array to exceed 4kA.This device will operate when the forward voltage is set to 600A.This device is powered with reverse voltage peak of 1A V.Its maximal reverse leakage current is 1μA, which is the current from that semiconductor device when the device is reverse biased.
MBR60080CT Features
a maximum output voltage of 300A a peak voltage of 1A a reverse voltage peak of 1A
MBR60080CT Applications
There are a lot of GeneSiC Semiconductor MBR60080CT applications of rectifier diode array.