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MBRF50035R

MBRF50035R

MBRF50035R

GeneSiC Semiconductor

MBRF50035R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website

SOT-23

MBRF50035R Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case TO-244AB
Diode Element Material SILICON
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Position UPPER
Terminal FormUNSPECIFIED
JESD-30 Code R-PUFM-X2
Operating Temperature (Max) 150°C
Number of Elements 2
Element ConfigurationCommon Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 1mA @ 35V
Voltage - Forward (Vf) (Max) @ If 750mV @ 250A
Forward Current500A
Operating Temperature - Junction -55°C~150°C
Application POWER
Max Reverse Voltage (DC) 35V
Average Rectified Current250A
Number of Phases 1
Peak Reverse Current1A
Max Repetitive Reverse Voltage (Vrrm) 35V
Diode Configuration 1 Pair Common Anode
RoHS StatusRoHS Compliant
In-Stock:1064 items

MBRF50035R Product Details

MBRF50035R Overview


In operation, this device will be set to 500A volts forward.A reverse voltage peak of 1A is used to power devices like this one.

MBRF50035R Features


a peak voltage of 1A
a reverse voltage peak of 1A

MBRF50035R Applications


There are a lot of GeneSiC Semiconductor MBRF50035R applications of rectifier diode array.

  • General Rectification
  • Rectifiers in switch mode power supplies (SMPS)
  • Rectifiers for UBS
  • Battery chargers
  • Crowbar applications
  • Free wheeling diode in low voltage converters
  • Rectifier for drives applications

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