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MBRF600100R

MBRF600100R

MBRF600100R

GeneSiC Semiconductor

MBRF600100R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website

SOT-23

MBRF600100R Datasheet

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Specifications
Name Value
Type Parameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case TO-244AB
Diode Element Material SILICON
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.10.00.80
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X2
Operating Temperature (Max) 150°C
Number of Elements 2
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 1mA @ 100V
Voltage - Forward (Vf) (Max) @ If 840mV @ 250A
Operating Temperature - Junction -55°C~150°C
Output Current-Max 300A
Application POWER
Max Reverse Voltage (DC) 100V
Average Rectified Current 250A
Number of Phases 1
Non-rep Pk Forward Current-Max 4000A
Diode Configuration 1 Pair Common Anode
Reverse Current-Max 1000μA
RoHS Status RoHS Compliant
MBRF600100R Product Details

MBRF600100R Overview


The forward voltage should be monitored and never exceed 1000μA.An output voltage of 300A is the maximum it can handle.

MBRF600100R Features


a forward voltage of 1000μA
a forward voltage of 1000μA
a maximum output voltage of 300A

MBRF600100R Applications


There are a lot of GeneSiC Semiconductor MBRF600100R applications of rectifier diode array.

  • Battery chargers
  • Free wheeling diode in low voltage converters
  • Rectifiers for UBS
  • General Rectification
  • Rectifier for drives applications
  • Crowbar applications
  • Rectifiers in switch mode power supplies (SMPS)

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