MBRT120100R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MBRT120100R Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Three Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X3
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
880mV @ 60A
Case Connection
ISOLATED
Forward Current
120A
Max Reverse Leakage Current
1μA
Max Surge Current
800A
Output Current-Max
60A
Application
POWER
Current - Average Rectified (Io)
120A DC
Max Reverse Voltage (DC)
100V
Average Rectified Current
120A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
100V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
50
$53.50260
$2675.13
MBRT120100R Product Details
MBRT120100R Overview
There is a maximum output voltage of 60A.A surge current should be monitored and should not exceed 800A.There will be no operation of this device when the forward voltage is set to 120A.Array is powered by a reverse voltage peak of 1A.The maximum reverse leakage current from this semiconductor is 1μA, which corresponds to the reverse leakage current from that device when reverse biased.
MBRT120100R Features
a maximum output voltage of 60A a peak voltage of 1A a reverse voltage peak of 1A
MBRT120100R Applications
There are a lot of GeneSiC Semiconductor MBRT120100R applications of rectifier diode array.