MBRT12020 datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MBRT12020 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 4 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Three Tower
Diode Element Material
SILICON
Packaging
Bulk
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X3
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
750mV @ 60A
Case Connection
ISOLATED
Forward Current
120A
Max Reverse Leakage Current
1μA
Max Surge Current
800A
Output Current-Max
60A
Application
POWER
Current - Average Rectified (Io)
120A DC
Max Reverse Voltage (DC)
20V
Average Rectified Current
120A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
20V
Diode Configuration
1 Pair Common Cathode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
50
$53.50260
$2675.13
MBRT12020 Product Details
MBRT12020 Overview
An output voltage of 60A is the maximum it can handle.As a general rule, surge currents should be monitored and kept below 800A.The device operates when the forward voltage is set to 120A.Powered by reverse voltage, this device has a peak voltage of 1A.When reverse biased, its maximal reverse leakage current is 1μA, which is the current flowing from that semiconductor device.
MBRT12020 Features
a maximum output voltage of 60A a peak voltage of 1A a reverse voltage peak of 1A
MBRT12020 Applications
There are a lot of GeneSiC Semiconductor MBRT12020 applications of rectifier diode array.