MBRT12020R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MBRT12020R Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 4 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Three Tower
Diode Element Material
SILICON
Packaging
Bulk
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X3
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
750mV @ 60A
Case Connection
ISOLATED
Forward Current
120A
Max Reverse Leakage Current
1μA
Max Surge Current
800A
Output Current-Max
60A
Application
POWER
Current - Average Rectified (Io)
120A DC
Max Reverse Voltage (DC)
20V
Average Rectified Current
120A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
20V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
50
$53.50260
$2675.13
MBRT12020R Product Details
MBRT12020R Overview
A maximum output voltage of 60A can be supported.Keeping the surge current under 800A and preventing it from exceeding it should be the rule.The device operates when the forward voltage is set to 120A.Typical devices like this one are powered by reverse voltage peaks of 1A.As a reverse biased semiconductor device, its maximal reverse leakage current is 1μA.
MBRT12020R Features
a maximum output voltage of 60A a peak voltage of 1A a reverse voltage peak of 1A
MBRT12020R Applications
There are a lot of GeneSiC Semiconductor MBRT12020R applications of rectifier diode array.