MBRT12030R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MBRT12030R Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 4 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Three Tower
Diode Element Material
SILICON
Packaging
Bulk
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X3
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
750mV @ 60A
Case Connection
ISOLATED
Forward Current
120A
Max Reverse Leakage Current
1μA
Max Surge Current
800A
Output Current-Max
60A
Application
POWER
Current - Average Rectified (Io)
120A DC
Max Reverse Voltage (DC)
30V
Average Rectified Current
120A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
30V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
50
$53.50260
$2675.13
MBRT12030R Product Details
MBRT12030R Overview
A maximum output voltage of 60A can be supported.Array is important to monArrayor the surge current and make sure that Array does not exceed 800A.In this case, the forward voltage has to be set at 120A to operate the device.This device is powered with reverse voltage peak of 1A V.When it's reverse biased, it's maximal reverse leakage current is 1μA.
MBRT12030R Features
a maximum output voltage of 60A a peak voltage of 1A a reverse voltage peak of 1A
MBRT12030R Applications
There are a lot of GeneSiC Semiconductor MBRT12030R applications of rectifier diode array.