MBRT20020R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MBRT20020R Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 5 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Three Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2010
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X3
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
750mV @ 100A
Case Connection
ISOLATED
Forward Current
200A
Max Reverse Leakage Current
1μA
Max Surge Current
1.5kA
Output Current-Max
100A
Application
POWER
Current - Average Rectified (Io)
200A DC
Max Reverse Voltage (DC)
20V
Average Rectified Current
200A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
20V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$70.90600
$1772.65
MBRT20020R Product Details
MBRT20020R Overview
The maximum output voltage can be set to 100A.Monarrayoring the surge current and preventing array from exceeding 1.5kA should be the rule.In operation, this device will be set to 200A volts forward.A reverse voltage peak of 1A is applied to devices like this one.The maximum reverse leakage current from a semiconductor device when reverse biased is 1μA.
MBRT20020R Features
a maximum output voltage of 100A a peak voltage of 1A a reverse voltage peak of 1A
MBRT20020R Applications
There are a lot of GeneSiC Semiconductor MBRT20020R applications of rectifier diode array.