MBRT20045 datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MBRT20045 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Three Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2010
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X3
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
750mV @ 100A
Case Connection
ISOLATED
Forward Current
200A
Max Reverse Leakage Current
1μA
Max Surge Current
1.5kA
Output Current-Max
100A
Application
POWER
Current - Average Rectified (Io)
200A DC
Max Reverse Voltage (DC)
45V
Average Rectified Current
200A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
45V
Diode Configuration
1 Pair Common Cathode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$70.90600
$1772.65
MBRT20045 Product Details
MBRT20045 Overview
The maximum output voltage is 100A.Surge currents should be monitored and prevented from exceeding 1.5kA.When the forward voltage is set to 200A, this device will operate.Devices like this one are powered with a reverse voltage peak of 1A.When reverse biased, its maximal reverse leakage current is 1μA, which is the current flowing from that semiconductor device.
MBRT20045 Features
a maximum output voltage of 100A a peak voltage of 1A a reverse voltage peak of 1A
MBRT20045 Applications
There are a lot of GeneSiC Semiconductor MBRT20045 applications of rectifier diode array.