MBRT40030R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
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MBRT40030R Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 5 months ago)
Mount
Chassis Mount, Surface Mount
Mounting Type
Chassis Mount
Package / Case
Three Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2012
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Solder
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Pitch
3mm
Terminal Position
UPPER
Orientation
Right Angle
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X3
Number of Contacts
5
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
750mV @ 200A
Case Connection
ISOLATED
Forward Current
400A
Max Reverse Leakage Current
1μA
Operating Temperature - Junction
-55°C~175°C
Max Surge Current
3kA
Output Current-Max
200A
Application
POWER
Current - Average Rectified (Io)
400A DC
Max Reverse Voltage (DC)
30V
Average Rectified Current
400A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
30V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$84.49080
$2112.27
MBRT40030R Product Details
MBRT40030R Overview
The maximum output voltage is 200A.In order to prevent the surge current from exceeding 3kA, it should be monitored.This device will operate when the forward voltage is set to 400A.Powered by reverse voltage, this device has a peak voltage of 1A.The maximum reverse leakage current from a semiconductor device when reverse biased is 1μA.
MBRT40030R Features
a maximum output voltage of 200A a peak voltage of 1A a reverse voltage peak of 1A
MBRT40030R Applications
There are a lot of GeneSiC Semiconductor MBRT40030R applications of rectifier diode array.