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MBRT40035R

  • MBRT40035R
  • MBRT40035R

MBRT40035R

MBRT40035R

GeneSiC Semiconductor

MBRT40035R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website

SOT-23

MBRT40035R Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status PRODUCTION (Last Updated: 6 months ago)
Mount Chassis Mount, Surface Mount
Mounting Type Chassis Mount
Package / Case Three Tower
Number of Pins 3
Diode Element Material SILICON
Packaging Bulk
Published 2003
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Solder
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -40°C
HTS Code 8541.10.00.80
Pitch 3mm
Terminal Position UPPER
Orientation Right Angle
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Contacts 7
Number of Elements 2
Max Voltage Rating (AC) 250V
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky, Reverse Polarity
Current - Reverse Leakage @ Vr 1mA @ 20V
Voltage - Forward (Vf) (Max) @ If 750mV @ 200A
Case Connection ISOLATED
Forward Current 200A
Max Reverse Leakage Current 1μA
Operating Temperature - Junction -55°C~150°C
Max Surge Current 3kA
Application POWER
Current - Average Rectified (Io) 400A DC
Forward Voltage 750mV
Max Reverse Voltage (DC) 35V
Average Rectified Current 400A
Number of Phases 1
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 35V
Diode Configuration 1 Pair Common Anode
Max Forward Surge Current (Ifsm) 3kA
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
25 $84.49080 $2112.27
MBRT40035R Product Details

MBRT40035R Overview


A forward voltage of 750mV will enable the device to operate.We should be monitoring the surge current and keeping it below 3kA.In the case of 200A forward voltage, the device will operate.This device is powered with reverse voltage peak of 1A V.The maximum reverse leakage current from this semiconductor is 1μA, which corresponds to the reverse leakage current from that device when reverse biased.

MBRT40035R Features


750mV forward voltage
a peak voltage of 1A
a reverse voltage peak of 1A

MBRT40035R Applications


There are a lot of GeneSiC Semiconductor MBRT40035R applications of rectifier diode array.

  • Rectifier for drives applications
  • Rectifiers for UBS
  • Battery chargers
  • General Rectification
  • Free wheeling diode in low voltage converters
  • Rectifiers in switch mode power supplies (SMPS)
  • Crowbar applications

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