MBRT40080R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
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MBRT40080R Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 5 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Three Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2010
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X3
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
880mV @ 200A
Case Connection
ISOLATED
Forward Current
400A
Max Reverse Leakage Current
1μA
Operating Temperature - Junction
-55°C~175°C
Max Surge Current
3kA
Output Current-Max
200A
Application
POWER
Current - Average Rectified (Io)
400A DC
Max Reverse Voltage (DC)
80V
Average Rectified Current
400A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
80V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$84.49080
$2112.27
MBRT40080R Product Details
MBRT40080R Overview
The maximum output voltage can be set to 200A.Keeping the surge current under 3kA and preventing it from exceeding it should be the rule.There will be no operation of this device when the forward voltage is set to 400A.In devices such as this one, reverse voltage peak is set at 1A.A semiconductor device's maximum reverse leakage current is 1μA, which is the current created by its reverse bias.
MBRT40080R Features
a maximum output voltage of 200A a peak voltage of 1A a reverse voltage peak of 1A
MBRT40080R Applications
There are a lot of GeneSiC Semiconductor MBRT40080R applications of rectifier diode array.