MBRT500100 datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
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MBRT500100 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Three Tower
Diode Element Material
SILICON
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X3
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
880mV @ 250A
Case Connection
ISOLATED
Forward Current
500A
Max Reverse Leakage Current
1μA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
3.5kA
Output Current-Max
250A
Application
POWER
Current - Average Rectified (Io)
500A DC
Max Reverse Voltage (DC)
100V
Average Rectified Current
500A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
100V
Diode Configuration
1 Pair Common Cathode
RoHS Status
RoHS Compliant
MBRT500100 Product Details
MBRT500100 Overview
An output voltage of 250A is the maximum it can handle.In order to prevent the surge current from exceeding 3.5kA, it should be monitored.As long as the forward voltage is set to 500A, the device will operate.There is a reverse voltage peak of 1A on devices like this one.Its maximal reverse leakage current is 1μA, which is the current from that semiconductor device when the device is reverse biased.
MBRT500100 Features
a maximum output voltage of 250A a peak voltage of 1A a reverse voltage peak of 1A
MBRT500100 Applications
There are a lot of GeneSiC Semiconductor MBRT500100 applications of rectifier diode array.