MBRT60020R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
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MBRT60020R Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Three Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X3
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
750mV @ 300A
Case Connection
ISOLATED
Forward Current
600A
Max Reverse Leakage Current
1μA
Max Surge Current
4kA
Output Current-Max
300A
Application
POWER
Current - Average Rectified (Io)
600A DC
Max Reverse Voltage (DC)
20V
Average Rectified Current
600A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
20V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$113.08200
$2827.05
MBRT60020R Product Details
MBRT60020R Overview
An output voltage of 300A is the maximum it can handle.Maintaining a surge current under 4kA and not letting it exceed it is the key to preventing it.In the case of 600A forward voltage, the device will operate.A reverse voltage peak of 1A is used to power devices like this one.This semiconductor device's maximal reverse leakage current is 1μA kA, which is its reverse leakage current when reverse biased.
MBRT60020R Features
a maximum output voltage of 300A a peak voltage of 1A a reverse voltage peak of 1A
MBRT60020R Applications
There are a lot of GeneSiC Semiconductor MBRT60020R applications of rectifier diode array.