MBRT60030 datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MBRT60030 Datasheet
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In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Three Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X3
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
750mV @ 300A
Case Connection
ISOLATED
Forward Current
600A
Max Reverse Leakage Current
1μA
Max Surge Current
4kA
Output Current-Max
300A
Application
POWER
Current - Average Rectified (Io)
600A DC
Max Reverse Voltage (DC)
30V
Average Rectified Current
600A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
30V
Diode Configuration
1 Pair Common Cathode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$110.50560
$2762.64
MBRT60030 Product Details
MBRT60030 Overview
300A is its maximum output voltage.In order to prevent the surge current from exceeding 4kA, it should be monitored.When the forward voltage is set to 600A, this device will operate.In devices such as this one, reverse voltage peak is set at 1A.A semiconductor device's maximum reverse leakage current is 1μA, which is the current created by its reverse bias.
MBRT60030 Features
a maximum output voltage of 300A a peak voltage of 1A a reverse voltage peak of 1A
MBRT60030 Applications
There are a lot of GeneSiC Semiconductor MBRT60030 applications of rectifier diode array.