MBRT60035R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
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MBRT60035R Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Three Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X3
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
750mV @ 300A
Case Connection
ISOLATED
Forward Current
600A
Max Reverse Leakage Current
1μA
Max Surge Current
4kA
Output Current-Max
300A
Application
POWER
Current - Average Rectified (Io)
600A DC
Max Reverse Voltage (DC)
35V
Average Rectified Current
600A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
35V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$113.08200
$2827.05
MBRT60035R Product Details
MBRT60035R Overview
There is a maximum output voltage of 300A.Array should be a rule to monArrayor the surge current and not allow Array to exceed 4kA.This device will operate when the forward voltage is set to 600A.This device is powered with reverse voltage peak of 1A V.When reverse biased, its maximal reverse leakage current is 1μA, which corresponds to its maximum reverse leakage current.
MBRT60035R Features
a maximum output voltage of 300A a peak voltage of 1A a reverse voltage peak of 1A
MBRT60035R Applications
There are a lot of GeneSiC Semiconductor MBRT60035R applications of rectifier diode array.