MBRT60040R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
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MBRT60040R Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 5 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Three Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X3
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
750mV @ 300A
Case Connection
ISOLATED
Forward Current
600A
Max Reverse Leakage Current
1μA
Max Surge Current
4kA
Output Current-Max
300A
Application
POWER
Current - Average Rectified (Io)
600A DC
Max Reverse Voltage (DC)
40V
Average Rectified Current
600A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
40V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$113.08200
$2827.05
MBRT60040R Product Details
MBRT60040R Overview
An output voltage of 300A is the maximum it can handle.Keeping the surge current under 4kA and preventing it from exceeding it should be the rule.A forward voltage of 600A will enable the device to operate.Powered by reverse voltage, this device has a peak voltage of 1A.When reverse biased, its maximum reverse leakage current is 1μA, which is the current coming from that semiconductor device.
MBRT60040R Features
a maximum output voltage of 300A a peak voltage of 1A a reverse voltage peak of 1A
MBRT60040R Applications
There are a lot of GeneSiC Semiconductor MBRT60040R applications of rectifier diode array.