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MBRTA50035R

MBRTA50035R

MBRTA50035R

GeneSiC Semiconductor

MBRTA50035R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website

SOT-23

MBRTA50035R Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Three Tower
Diode Element Material SILICON
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position UPPER
Terminal FormUNSPECIFIED
JESD-30 Code R-PUFM-X3
Operating Temperature (Max) 150°C
Number of Elements 2
Element ConfigurationCommon Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 1mA @ 35V
Voltage - Forward (Vf) (Max) @ If 700mV @ 250A
Case Connection ISOLATED
Forward Current500A
Operating Temperature - Junction -55°C~150°C
Application POWER
Max Reverse Voltage (DC) 35V
Average Rectified Current250A
Number of Phases 1
Peak Reverse Current1A
Max Repetitive Reverse Voltage (Vrrm) 35V
Diode Configuration 1 Pair Common Anode
RoHS StatusRoHS Compliant
In-Stock:1861 items

MBRTA50035R Product Details

MBRTA50035R Overview


The device operates when the forward voltage is set to 500A.In devices such as this one, reverse voltage peak is set at 1A.

MBRTA50035R Features


a peak voltage of 1A
a reverse voltage peak of 1A

MBRTA50035R Applications


There are a lot of GeneSiC Semiconductor MBRTA50035R applications of rectifier diode array.

  • General Rectification
  • Rectifiers for UBS
  • Crowbar applications
  • Free wheeling diode in low voltage converters
  • Rectifiers in switch mode power supplies (SMPS)
  • Rectifier for drives applications
  • Battery chargers

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