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MBRTA50035R

MBRTA50035R

MBRTA50035R

GeneSiC Semiconductor

MBRTA50035R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website

SOT-23

MBRTA50035R Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Three Tower
Diode Element Material SILICON
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X3
Operating Temperature (Max) 150°C
Number of Elements 2
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 1mA @ 35V
Voltage - Forward (Vf) (Max) @ If 700mV @ 250A
Case Connection ISOLATED
Forward Current 500A
Operating Temperature - Junction -55°C~150°C
Application POWER
Max Reverse Voltage (DC) 35V
Average Rectified Current 250A
Number of Phases 1
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 35V
Diode Configuration 1 Pair Common Anode
RoHS Status RoHS Compliant
MBRTA50035R Product Details

MBRTA50035R Overview


The device operates when the forward voltage is set to 500A.In devices such as this one, reverse voltage peak is set at 1A.

MBRTA50035R Features


a peak voltage of 1A
a reverse voltage peak of 1A

MBRTA50035R Applications


There are a lot of GeneSiC Semiconductor MBRTA50035R applications of rectifier diode array.

  • General Rectification
  • Rectifiers for UBS
  • Crowbar applications
  • Free wheeling diode in low voltage converters
  • Rectifiers in switch mode power supplies (SMPS)
  • Rectifier for drives applications
  • Battery chargers

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